jiangsu changjiang electronics technology co., ltd to-251/to-252-2 plastic-encapsulate transistors MJD112 transistor (npn) features y complementary darlington power transistors dpak for surface mount applications maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage 100 v v ceo collector-emitter voltage 100 v v ebo emitter-base voltage 5 v i c collector current -continuous 2 a p c collector power dissipation 1 w r jc thermal resistance, junction to case 6.25 /w r ja thermal resistance, junction to ambient 71.4 /w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =1ma,i e =0 100 v collector-emitter breakdown voltage v (br)ceo i c =30ma,i b =0 100 v emitter-base breakdown voltage v (br)ebo i e =5ma,i c =0 5 v collector cut-off current i cbo v cb =100v,i e =0 20 a collector-emitter cut-off current i ceo v ce =50v,i e =0 20 a emitter cut-off current i ebo v eb =5v,i c =0 2 ma h fe(1) v ce =3v,i c =500ma 500 h fe(2) v ce =3v,i c =2a 1000 12000 dc current gain h fe(3) v ce =3v,i c =4a 200 v ce(sat)1 i c =2a,i b =8ma 2 v collector-emitter saturation voltage v ce(sat)2 i c =4a,i b =40ma 3 v base-emitter voltage v be v ce =3v,i c =2a 2.8 v transition frequency f t v ce =10v,i c =0.75a,f=1mhz 25 mhz collector output capacitance c ob v cb =10v,i e =0,f=0.1mhz 100 pf to-251 to-252-2 1. base 2. collector 3. emitter MJD112 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co.,ltd r o hs
typical characteristics MJD112 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. ,ltd MJD112 r o hs
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